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Tungsten and Sapphire
Tungsten Crucible for Sapphire Growth Furnace Tungsten Crucible Cover for Crystal Growth Furnace Tungsten Bracket for Sapphire Furnace Tungsten Heat Shield for Crystal Furnace Tungsten Electrode Screen for Sapphire Crystal Furnace Tungsten Heater for Sapphire Growth Furnace Tungsten Wire Heater for Sapphire Crystal Furnace Tungsten Rhenium Wire for Sapphire Crystal Growth Furnace
Molybdenum Cover for Sapphire Growth Furnace
Molybdenum Barrel Screen for Crystal Growth Furnace Molybdenum Crucible for Sapphire Furnace Molybdenum Boat for Crystal Furnace Molybdenum Heat Shield for Sapphire Growth Furnace Molybdenum Bracket for Crystal Growth Furnace Thermal Field for Sapphire Growth Furnace Molybdenum Heating Furnace for Sapphire Growth Molybdenum Electrode Screen for Crystal Growth Furnace Molybdenum Heating Element for Sapphire Growth Furnace Molybdenum Hook for Saphhire Furnace Molybdenum Mandrel for Sapphire Crystal Furnace Molybdenum Stream Mouth for Crystal Growth Furnace Molybdenum Seed Chunk for Sapphire Crystal Growth Furnace
Manufacturing Tecniques of Sapphire Growth Furnace
Manufacturing Process of Tungsten and Molybdenum Manufacturing Process of Molybdenum Crucible for Sapphire Growth Furnace Manufacturing Process of Tungsten Crucible for Sapphire Growth Furnace Molybdenum Ore Selection Tungsten Ore Selection
Sapphire
Sapphire and LED Introduction to Sapphire History of Sapphire Growth Technique Kyropoulos Method for Sapphire Growth Czochralski Method for Sapphire Growth Edge Defined Film Fed Growth for Sapphire Growth Heat Exchanger Method for Sapphire Growth Temperature Gradient Technique for Sapphire Growth Vertical Gradient Freeze Method for Sapphire Growth Vertical Horizontal Gradient Freezing for Sapphire Growth SAPMAC for Sapphire Growth Sapphire and Optical Parts Sapphire and Micro-electronics Sapphire and Infrared Transmitting Material Process of Sapphire Growth Comparison of Sapphire Growth Techniques |
You're viewing: Home >>Sapphire Growth Method-Edge-defined Film-fed Growth (EFG)
The fluid will provide thin film enough raw material and because the film is restricted by the mold, but feed the raw material for thin film growing, therefore, the method is called edge-defined film-fed growth. Detailed description of the crystal growth methods permitting one to obtain complicated shape crystals from the melt is given. The variable shaping technique allows growth of crystals with a discrete altering cross-section configuration during crystallization. So is the EFG Method. The effects of the heat transfer environment in Edge-Defined Film-Fed Growth on melt/solid interface shape and lateral dopant segregation are studied by finite-element analysis of two-dimensional models for heat and mass transfer. Heat transfer configurations are studied that correspond to the uniform surroundings assumed in previous models and to low- and high-speed growth systems. The maximum growth rate for a silicon sheet is calculated and the range of validity of one-dimensional heat transfer models is established. The lateral segregation that results from curvature of the solidification interface is calculated for two solutes, boron and aluminum. In this way, heat transfer is linked directly to the uniformity of the product crystal.
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