Sapphire Crystal Growing Methods Comparison |
Growing Method |
Advantages |
Disadvantages |
Application |
Kyropoulos |
High quality, Large size, High yield, Low cost |
Complicate operation, Low consistency, low qualified yield, Not suitable for C sapphire |
Rublcon (LED sapphire base) |
Czochralski |
Production examination easily, Good Shape |
High density, iridium gold crucible, High cost, Size restriction |
HoneyWell |
EFG |
High quality |
Complicated Equipment and technology |
Kyocera |
TGT |
Simple equipment, easy operation, high yield, C crystal |
Uniformity temperature, long period, high cost |
Shanghai Institute of Optics and Fine Mechanics |
VGF |
Simple equipment, high yield |
High density |
Yunnan, China |
| VHGF |
Crystal size and shape are not restricted |
Right is kept in STC |
STC |
HEM |
High quality, large size |
High requirement on equipment, complicated techniques, high cost, sapphire easier to break |
Crystal System |
SAPMAC |
Entire crystal, annealing same location, short circle, low cost |
Easily influenced by temperature fluctuation |
Northeast China |
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